Commonly used models of rectifier diodes, what are important parameters?

Rectifier diodes are usually flat silicon diodes that are used in various power rectification circuits. When choosing a rectifier diode, following important parameters should be considered.

(1)Maximum average rectified current IF: Refers to maximum forward average current that can pass through a diode during continuous operation. This current is determined by junction area of ​​the PN junction and heat dissipation conditions. When using, it should be taken into account that average current through diode cannot exceed this value, while conditions for heat dissipation must be met. For example, IF of a 1N4000 series diode is 1A.

(2)Maximum reverse operating voltage VR: refers to maximum reverse voltage allowed to be applied to diode. If it is greater than this value, reverse current (IR) will rise sharply and unidirectional conduction of diode will be broken, causing reverse breakdown. Usually for (VR) take half reverse breakdown voltage (VB). For example, VR 1N4001 is 50V, 1N4002-1n4006 is 100V, 200V, 400V, 600V and 800V respectively, while VR 1N4007 is 1000V.

(3)Maximum Reverse Current IR: This is reverse current that can flow through diode at maximum reverse operating voltage. This parameter reflects only quality of electrical conductivity. Therefore, lower current value, better quality of diode.

(4)VB breakdown voltage: refers to voltage value at sharp bend point of reverse current-voltage curve of a diode. When reversal is a soft characteristic, it refers to voltage value under given conditions of reverse leakage current.

(5)Maximum operating frequency fm: This is highest operating frequency of diode under normal conditions. This is mainly determined by junction capacitance and diffusion capacitance of PN junction. If operating frequency exceeds fm, unidirectional conduction of diode will not reflect well. For example, fm of a 1N4000 series diode is 3 kHz. Another fast recovery diode is used for high frequency AC rectification, such as in a switching power supply.

(6)Reverse recovery time trr: refers to reverse recovery time at specified load, forward current and maximum reverse transient voltage.

(7)Zero bias CO capacitance: refers to sum of diffusion capacitance and junction capacitance when voltage across diode is zero. It should be noted that due to limited technological process, even same type of diodes have a large spread in their parameters. The parameters given in manual are often in range. If test conditions are changed, corresponding parameters will also change. less than 500 µA.

The rectifier diodes used in conventional series regulated power circuits do not have high requirements for cutoff frequency reverse recovery time, as long as rectifier diodes with maximum rectification current and maximum reverse operating current meet requirements are selected according to requirements of circuit. For example, 1N series, 2CZ series, RLR series, etc.

The rectifier diode used in rectifier circuit of switching regulated power supply and switching rectifier circuit should use a rectifier diode with higher operating frequency and shorter reverse recovery time (such as RU series, EU series, V series, 1SR series and etc.) or select a fast recovery diode.

Diode model Application Maximum reverse operating voltage VR Maximum average rectified current IF

Silicon rectifier diode 1N4001 50V, 1A,(Ir=5uA,Vf=1V,Ifs=50A)

1N4002 100V, 1A silicon rectifier diode

1N4003 Silicon rectifier diode 200V, 1A,

1N4004 Silicon Rectifier Diode 400V, 1A,

1N4005 Silicon Rectifier Diode 600V, 1A,

1N4006 silicon rectifier diode 800V, 1A

1N4007 silicon rectifier diode 1000V, 1A

1N4148 Silicon Switching Diode 75V, 4PF, Ir=25nA, Vf=1V,

1N5391 Silicon Rectifier Diode 50V, 1.5A, (Ir=10µA, Vf=1.4V, Ifs=50A)

1N5392 Silicon Rectifier Diode 100V, 1.5A,

1N5393 Silicon Rectifier Diode 200V, 1.5A,

1N5394 Silicon Rectifier Diode 300V, 1.5A,

Silicon rectifier diode 1N5395 400V, 1.5A,

1N5396 silicon rectifier diode 500V, 1.5A,

1N5397 Silicon Rectifier Diode 600V, 1.5A,

1N5398 Silicon Rectifier Diode 800V, 1.5A,

1N5399 Silicon Rectifier Diode 1000V, 1.5A,

1N5400 Silicon Rectifier Diode 50V, 3A, (Ir=5µA, Vf=1V, Ifs=150A)

1N5401 Silicon Rectifier Diode 100V, 3A,

1N5402 Silicon rectifier diode 200V, 3A,

1N5403 Silicon Rectifier Diode 300V, 3A,

1N5404 Silicon Rectifier Diode 400V, 3A,

1N5405 Silicon Rectifier Diode 500V, 3A,

Silicon rectifier diode 1N5406 600V, 3A,

1N5407 silicon rectifier diode 800V, 3A,

1N5408 Silicon Rectifier Diode 1000V, 3A,

1S1553 Silicon switching diode 70V, 100mA, 300mW, 3.5pF, 300mA,

1S1554 Silicon Switching Diode 55V, 100mA, 300mW, 3.5PF, 300mA

1S1555 Silicon switching diode 35V, 100mA, 300mW, 3.5pF, 300mA,

1S2076 Silicon Switching Diode 35V, 150mA, 250mW, 8ns, 3pF, 450mA, Ir≤1µA, Vf≤0.8V, ≤1.8pF,

1S2076A Silicon Switching Diode 70V, 150mA, 250mW, 8ns, 3pF, 450mA, 60V, Ir≤1µA, Vf≤0.8V, ≤1.8pF,

1S2471 Silicon switching diode 80V, Ir≤0.5µA, Vf≤1.2V,≤2PF,

1S2471B Silicon Switching Diode 90V, 150mA, 250mW, 3ns, 3pF, 450mA,

1S2471V Silicon Switching Diode 90V, 130mA, 300mW, 4ns, 2pF, 400mA,

1S2472 Silicon switching diode 50V, Ir≤0.5µA, Vf≤1.2V,≤2PF,

1S2473 Silicon switching diode 35V, Ir≤0.5µA, Vf≤1.2V,≤3PF,

1S2473H Silicon switching diode 40V, 150mA, 300mW, 4ns, 3pF, 450mA,

2AN1 Diode 5A, f=100kHz

2CK100 Silicon Switching Diode 40V, 150mA, 300mW, 4ns, 3pF, 450mA,

2CK101 Silicon Switching Diode 70V, 150mA, 250mW, 8ns, 3pF, 450mA,

2CK102 Silicon Switching Diode 35V, 150mA, 250mW, 8ns, 3PF, 450mA,

2CK103 Silicon switching diod 20V, 100mA, 2PF, 100mA,

2CK104 Silicon Switching Diode 35V, 100mA, 10ns, 2pF, 225mA,

2CK105 Silicon Switching Diode 35V, 100mA, 4ns, 2pF, 225mA,

2CK106 Silicon Switching Diode 75V, 100mA, 4ns, 2pF, 100mA,

2CK107 Silicon Switching Diode 90V, 130mA, 300mW, 4ns, 2pF, 400mA,

2CK108 Silicon Switching Diode 70V, 100mA, 300mW, 3.5pF, 300mA,

2CK109 Silicon Switching Diode 35V, 100mA, 300mW, 3.5pF, 300mA,

2CK110 Silicon Switching Diode 90V, 150mA, 250mW, 3ns, 3pF, 450mA,

2CK111 Silicon switching diode 55V, 100mA, 300mW, 3.5pF, 300mA,

2CK150 Silicon Switching Diode 15V, Ir≤25nA, Vf≤1.2V,≤2PF,

2CK161 15V silicon switching diode, Ir≤25nA, Vf≤1.2V,≤2PF,

2CK4148 Silicon Switching Diode 75V, Ir≤25nA, Vf=1V, 4PF,

2CK2076 Silicon switching diode 35V, Ir≤1µA, Vf≤0.8V, ≤1.8PF,

2CK2076A silicon switching diode 60V, Ir≤1uA, Vf≤0.8V, ≤1.8PF,

2CK2471 Silicon switching diode 80V, Ir≤0.5µA, Vf≤1.2V,≤2PF,

2CK2472 Silicon switching diode 50V, Ir≤0.5µA, Vf≤1.2V,≤2PF,

2CK2473 35V silicon switching diode, Ir≤0.5uA, Vf≤1.2V,≤3PF,

Silicon diode 2CN1A 400V, 1A, f=100kHz,

2CN1B Silicon diode 100 V, 1 A, f=100 kHz,

Silicon diode 2CN3 V, 1A, f=100kHz,

2CN3D Silicon Diode V, 1A, f=100KHz,

Silicon diode 2CN3E V, 1A, f=100kHz,

Silicon diode 2CN3F V, 1A, f=100kHz,

Silicon diode 2CN3G V, 1A, f=100kHz,

2CN3H silicon diode V, 1A, f=100 kHz,

Silicon diode 2CN3I V, 1A, f=100kHz,

2CN3K V silicon diode, 1A, f=100 kHz,

2CN4D V silicon diode, 1.5 A, f=100 kHz,

2CN5D V silicon diode, 1.5 A, f=100 kHz,

Silicon diode 2CN6 V, 1A, f=100kHz,

2CP1553 silicon diode Ir≤0.5uA, Vf≤1.4V,≤3.5PF,

2CP1554 silicon diode Ir≤0.5uA, Vf≤1.4V,≤3.5PF,

2CP1555 silicon diode Ir≤0.5uA, Vf≤1.4V,≤3.5PF